发明名称 |
Substrate-processing apparatus and method of producing a semiconductor device |
摘要 |
A CVD device has a reaction furnace ( 39 ) for processing a wafer ( 1 ); a seal cap ( 20 ) for sealing the reaction furnace ( 39 ) hermetically; an isolation flange ( 42 ) opposite to the seal cap ( 20 ); a small chamber ( 43 ) formed by the seal cap ( 20 ), the isolation flange ( 42 ), and the wall surface in the reaction furnace ( 39 ); a feed pipe ( 19 b) for supplying a first gas to the small chamber ( 43 ); an outflow passage ( 42 a) provided in the small chamber ( 43 ) for allowing the first gas to flow into the reaction furnace ( 39 ); and a feed pipe ( 19 a) provided downstream from the outflow passage ( 42 a) for supplying a second gas into the reaction furnace ( 39 ). Byproducts such as NH<SUB>4</SUB>Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
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申请公布号 |
US2006150904(A1) |
申请公布日期 |
2006.07.13 |
申请号 |
US20050528137 |
申请日期 |
2005.12.12 |
申请人 |
OZAKI TAKASHI;TANIYAMA TOMOSHI;UNAMI HIROSHI;MAEDA KIYOHIKO;MORITA SHINYA;TAKASHIMA YOSHIKAZU;HISAKADO SADAO |
发明人 |
OZAKI TAKASHI;TANIYAMA TOMOSHI;UNAMI HIROSHI;MAEDA KIYOHIKO;MORITA SHINYA;TAKASHIMA YOSHIKAZU;HISAKADO SADAO |
分类号 |
H01L21/20;C23C16/00;C23C16/44;C30B25/08;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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