| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a halftone phase shift mask suppressing production of ammonium ions and having superior chemical resistance. <P>SOLUTION: The halftone phase shift mask blank 10 has a semi-transparent film 2, having a predetermined transmittance at the wavelength of exposure light and essentially comprising nitrogen, metals and silicon, formed on a transparent substrate 1, wherein the surface layer of the semi-transparent film 2 has ≥35 atm% oxygen content and ≤5 atm% metal content, the surface layer of the semi-transparent film 2 has ≤45 atm% nitrogen content, and the surface layer has 1 to 5 nm film thickness. The semi-transparent film 2 is patterned, to obtain the halftone phase shift mask 20 having a semi-transparent portion 2a formed in the film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
