| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist patter and a method for manufacturing a semiconductor device, wherein it is possible to prevent a watermark on a protection film formed on a resist film and an invasion of an immersion solution into the resist film. <P>SOLUTION: The method for forming the resist patter in which a resist pattern is formed by an immersion exposure, comprises the step (ST102) which is a step of forming the resist film on a processing substrate, and in which a contact angle of the resist film and the immersion solution is a first angle; the step (ST103) which is a step of forming a first protection film on the resist film, and in which a contact angle of the first protection film and the immersion solution is a second angle larger than the first angle; the step (ST104) which is a step of forming a second protection film on the first protection film, and in which a contact angle of the second protection film and the immersion solution is a third angle smaller than the second angle; and the step of forming a latent image on the resist film by the immersion exposure. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
