| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To sufficiently ensure connection of a plug for electric connection while sufficiently preventing deterioration in properties of a capacitor structure, thereby suppressing imperfect contact to improve yield, so that a highly-reliable semiconductor device is realized. <P>SOLUTION: In a region corresponding to a via hole 39a of a second plug 39 described later of a first protective film 33, that is, a region to be matched with a first plug 24, an opening 33a having a hole size, for example, about 0.4μm larger than that of the via hole 39a is formed by lithography and subsequent dry etching. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
