发明名称 METHOD OF MANUFACTURING NONVOLATILE ORGANIC MEMORY DEVICE AND NONVOLATILE ORGANIC MEMORY DEVICE MANUFACTURED THEREBY
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile organic memory device which method allows conductive nanoparticles to rapidly and uniformly disperse in an organic material using in-situ dispersion of an ionic solution of the conductive nanoparticles. SOLUTION: In manufacturing a nonvolatile organic memory device 100 which includes a memory layer 20 interposed between an upper electrode 10 and a lower electrode 30, ions of the conductive particles are disposed in an organic material between the upper electrode 10 and the lower electrode 30, and then the conductive nanoparticles are formed by reducing the ions of conductive nanoparticles in the organic material, to form the memory layer 20. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006186363(A) 申请公布日期 2006.07.13
申请号 JP20050371704 申请日期 2005.12.26
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KANG YOON SOK;LEE SANG-KYUN;SHU GENTEI;LEE KWANG HEE
分类号 H01L27/28;H01L45/00;H01L49/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L27/28
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