发明名称 METHOD AND APPARATUS OF DRY ETCHING
摘要 PROBLEM TO BE SOLVED: To monitor the generation of a black silicon and its signs in dry etching of a substrate which consists of a silicon series material. SOLUTION: A dry etching apparatus 11 includes a coil 36 for generating a plasma in a vacuum container 12, and a camera 45 which photoes the image of the surface to be etched of the substrate (1) which generates the plasma and is under processing by dry etching. A controller 55 has a monitoring unit 57 for generating the black silicon or its signs based on the image which the camera 45 photoed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006186221(A) 申请公布日期 2006.07.13
申请号 JP20040380273 申请日期 2004.12.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIROSHIMA MITSURU;MIYAKE KIYOO;OKUNE MITSUHIRO;WATANABE AKIZO;SUZUKI HIROYUKI
分类号 H01L21/3065 主分类号 H01L21/3065
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