发明名称 |
METHOD AND APPARATUS OF DRY ETCHING |
摘要 |
PROBLEM TO BE SOLVED: To monitor the generation of a black silicon and its signs in dry etching of a substrate which consists of a silicon series material. SOLUTION: A dry etching apparatus 11 includes a coil 36 for generating a plasma in a vacuum container 12, and a camera 45 which photoes the image of the surface to be etched of the substrate (1) which generates the plasma and is under processing by dry etching. A controller 55 has a monitoring unit 57 for generating the black silicon or its signs based on the image which the camera 45 photoed. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006186221(A) |
申请公布日期 |
2006.07.13 |
申请号 |
JP20040380273 |
申请日期 |
2004.12.28 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HIROSHIMA MITSURU;MIYAKE KIYOO;OKUNE MITSUHIRO;WATANABE AKIZO;SUZUKI HIROYUKI |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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