METHOD FOR MANUFACTURING NITRIDE CRYSTAL OF GROUP III ELEMENT, NITRIDE CRYSTAL OF GROUP III ELEMENT OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE INCLUDING THE NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a production method by which a nitride crystal of group III element having excellent crystallinity can be produced by suppressing mixing of impurities into the crystal. SOLUTION: At least one group III element selected from Ga, Al and In, at least one of an alkali metal and an alkaline earth metal, and a melt containing nitrogen are first prepared. Then, at least one of the nitride of the group III element formed in the melt and a raw material of the nitride of the group III element in the melt is vaporized, and the formed vapor is crystallized on the surface of a substrate, arranged in the atmosphere, to form or grow the nitride crystal of the group III element. COPYRIGHT: (C)2006,JPO&NCIPI