| 摘要 |
PROBLEM TO BE SOLVED: To improve a breakdown voltage after the operation of a transistor in a semiconductor device including the transistor. SOLUTION: The semiconductor device 100 includes the transistor in which a current flows via first/second N-type embedded regions 106, 108 having the same conduction type as that of an N-type collector region 118. An N-type connection region 107, which is a part for forming a second conduction-type region by impact ionization when the transistor is in an operational state, is provided on a route including the N-type collector region 118 and the first/second embedded regions 106, 108 in the semiconductor device 100. COPYRIGHT: (C)2006,JPO&NCIPI
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