发明名称 METHOD OF CHEMICAL MECHANICAL POLISHING AND METHOD OF PROCESSING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To enable it to check promptly after a treatment a poor treatment which affects it after the following process. SOLUTION: A polish defective inspection means 40 is provided to a front end module 30 in a chemical mechanical polishing apparatus 10. A semiconductor wafer which a series of chemical mechanical polishing treatment, a cleaning treatment, and a drying treatment are ended, is moved from a drying room 15 to the polish defective inspection means 40 by a transfer robot 16, and the existence of the polish defects, such as a scratch, etc. is inspected before the conveyance of the following process is performed. Only the excellent article is sent to the hoop 20b of a port 12. At the time point of performing the housing of the necessary number of sheets, it conveys at the following process. Thus, after the chemical mechanical polishing treatment ends, since the total inspection of the polish defect can be conducted, the conveyance of a defective subcouductor wafer to the following process can be prevented certainly. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006186124(A) 申请公布日期 2006.07.13
申请号 JP20040378567 申请日期 2004.12.28
申请人 RENESAS TECHNOLOGY CORP 发明人 AOYANAGI MASAHIRO;TSUCHIYAMA YOJI
分类号 H01L21/66;H01L21/02;H01L21/304 主分类号 H01L21/66
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