| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that can remove a multi-layer structure SiC film equipped with an antirelection function and a hard mask function efficiently and absolutely, simplifies a film removal process in the gate electrode formation process, and minimizes negative influences to the device. <P>SOLUTION: This method etches an SiC film using a patternized resist as a mask for a laminated body with such films formed on a board such as a high dielectric film, polysilicon film, and an SiC film with antireflection and hard mask functions; etches the polysilicon film using the SiC film as the mask; and then executes a plasma treatment process for applying plasma to the SiC film and the exposed high dielectric film for reformulation, and a cleaning process for removing the reformulated SiC film and high dielectric film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
