| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that it is impossible to perform a fast access operation for needing much time when a redundancy discriminating signal is outputted by a release signal of an inverter delay circuit in a redundancy replacement discriminating circuit. SOLUTION: The semiconductor memory device capable of performong a fast operation is provided with: a redundancy replacement discriminating circuit chain; a pseudo redundancy replacement discriminating circuit chain having almost the same delay time as the redundancy replacement discriminating circuit chain; and the redundancy replacement discriminating circuit operated with a minimum margin by outputting the redundancy discriminated result of the redundancy replacement discriminating circuit chain by an output of the pseudo redundancy replacement discriminating circuit chain. COPYRIGHT: (C)2006,JPO&NCIPI
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