| 摘要 |
A fabrication method of a crystallized semiconductor thin film is such that: by performing pulse irradiation of energy beams in a minute slit shape to a semiconductor thin film ( 5 ), the semiconductor thin film ( 5 ) of an region to which the energy beams are irradiated is fused and solidified over the whole area in a thickness direction so as to be crystallized, a main beam ( 6 ) and a sub beam ( 7 ), having smaller energy per unit area than that of the main beam ( 6 ), which adjoins the main beam ( 6 ), being irradiated to the semiconductor thin film ( 5 ).
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