| 摘要 |
The invention relates to a solar cell which comprises photoactive semiconductor layers extending between the front and the back contact, and an integrated protective diode (bypass diode), said protective diode having a polarity opposite to that of the solar cell and is provided at its front with a p-conducting semiconductor layer, and the protective diode is connected to the front contact. The aim of the invention is to provide a highly stable protective diode and to prevent a migration of metal atoms. For this purpose, a tunnel diode (38) extends on the p-conducting semiconductor layer (36) of the protective diode (32), said tunnel diode being connected to the front contact (14) via an n+ layer. |
