Verfahren zur Herstellung einer Grabenstrukturkondensatoreinrichtung,申请号DE20011042580-传众专利搜索

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发明名称	Verfahren zur Herstellung einer Grabenstrukturkondensatoreinrichtung
摘要
申请公布号	DE10142580(B4)	申请公布日期	2006.07.13
申请号	DE20011042580	申请日期	2001.08.31
申请人	INFINEON TECHNOLOGIES AG	发明人	SEIDL, HARALD;GUTSCHE, MARTIN;HECHT, THOMAS;LEONHARDT, MATTHIAS;SCHROEDER, UWE
分类号	H01L21/8242	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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