Semiconductor device and fabrication process thereof

摘要

A method of fabricating a semiconductor device includes a dry etching process of a silicon surface. The dry etching process is conducted by an etching gas containing at least one gas species selected from the group consisting of: HBr, HCl, Cl₂, Br₂ and HI, wherein the dry etching process includes a first step conducted at a first temperature; and a second step conducted at a second temperature.