发明名称 |
Self-aligned process for nanotube/nanowire FETs |
摘要 |
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
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申请公布号 |
US2006151844(A1) |
申请公布日期 |
2006.07.13 |
申请号 |
US20050031168 |
申请日期 |
2005.01.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AVOURIS PHAEDON;CARRUTHERS ROY A.;CHEN JIA;DETAVERNIER CHRISTOPHE G.;LAVOIE CHRISTIAN;WONG HON-SUM P. |
分类号 |
H01L29/94;H01L29/76;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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