发明名称 |
INFRARED LIGHT EMITTING DEVICE AND GAS SENSOR USING SAME |
摘要 |
<p>In the infrared radiation element (A), a heat insulating layer 2, which has sufficiently smaller thermal conductivity than a semiconductor substrate 1, is formed on a surface in the thickness direction of the semiconductor substrate 1, and a heating layer 3, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer 2, is formed on the heat insulating layer 2, and a pair of pads 4 for energization are formed on the heating layer 3. The semiconductor substrate 1 is made of a silicon substrate. The heat insulating layer 2 and the heating layer 3 are formed by porous silicon layers having different porosities from each other, and the heating layer 3 has smaller porosity than the heat insulating layer 2. By using the infrared radiation element (A) as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.</p> |
申请公布号 |
EP1679735(A1) |
申请公布日期 |
2006.07.12 |
申请号 |
EP20040793026 |
申请日期 |
2004.10.27 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
ICHIHARA, TSUTOMU;HAMADA, CHOUSEI;AKEDO, KOSHI;KITAMURA, HIROAKI;FUKSHIMA, HIROSHI;KOMODA, TAKUYA;HATAI, TAKASHI |
分类号 |
H01L37/00;H05B3/00;H05B3/26;(IPC1-7):H01K1/04;G01N21/01;H05B3/10 |
主分类号 |
H01L37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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