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发明名称
ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC
摘要
申请公布号
EP1678353(A2)
申请公布日期
2006.07.12
申请号
EP20040789439
申请日期
2004.09.30
申请人
AVIZA TECHNOLOGY, INC.
发明人
LEE, SANG-IN;OWYANG, JON S.;SENZAKI, YOSHIHIDE;HELMS, AUBREY L.;KAPKIN, KEREM
分类号
C30B25/00;C23C16/02;C23C16/40;C23C16/42;C23C16/455;H01L;(IPC1-7):C30B25/00
主分类号
C30B25/00
代理机构
代理人
主权项
地址
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