发明名称 Doping method and semiconductor device fabricated using the method
摘要 A doping method includes the step of attaching molecules or clusters (7) to the surface of a semiconductor substrate (3) to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.
申请公布号 EP1396880(A3) 申请公布日期 2006.07.12
申请号 EP20030255534 申请日期 2003.09.04
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;NEC CORPORATION 发明人 KANAYAMA, TOSHIHIKO;MIYAZAKI, TAKEHIDE;HIURA, HIDEFUMI
分类号 H01L21/225;H01L21/28;H01L21/336;H01L29/78 主分类号 H01L21/225
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