SONOS memory device having nanocrystal layer

摘要

Provided is a SONOS memory device having nanocrystal layers. The SONOS memory device includes a memory type transistor including a gate with a SONOS structure on a semiconductor substrate. The gate is formed by sequentially stacking a tunneling oxide layer, a memory node layer having a trap site in which charges passing through the tunneling oxide layer are trapped, and a gate electrode. The memory node layer includes a crystal layer composed of nanocrystals that are separated from one another to trap the charges.