发明名称 Method of forming a conductive pattern of a thin film transistor
摘要 <p>A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove. </p>
申请公布号 EP1670079(A3) 申请公布日期 2006.07.12
申请号 EP20050111732 申请日期 2005.12.06
申请人 SAMSUNG SDI CO., LTD.;SAMSUNG SDI GERMANY GMBH 发明人 SUH, MIN-CHUL;KOO, JAE-BON;AHN, TAEK;KIM, HYE-DONG;JOERG, FISCHER;HUMBS, WERNER
分类号 H01L51/00 主分类号 H01L51/00
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