FILM FORMING MATERIAL, FILM FORMING METHOD AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for forming a silicide film which is sufficiently useable for a next generation transistor. SOLUTION: The film deposition material is used for depositing a silicide film composed by using one or two metallic elements selected from the group of Co and N, and Si. As the raw materials for the metallic elements, one or more compounds selected from the group of formula I (wherein, M is Co or Ni; n is 2 or 3; and R1, R2and R3are H or an alkyl group), and formula II (wherein, M is Co or Ni; and R1, R2, R3, R4and R5are H or an alkyl group). As the raw material for Si, one or more compounds selected from SiH4, Me3SiH, Et3SiH or the like are used. COPYRIGHT: (C)2004,JPO