Structure for an LDMOS transistor and fabrication method for thereof

摘要

A structure for an LDMOS transistor has a horseshoe-shaped gate layer formed on a N-type layer of a semiconductor silicon substrate, in which the gate layer comprises a transverse-extending area, a first lengthwise-extending area connected to a left end of the transverse-extending area and a second lengthwise-extending area connected to a right end of the transverse-extending area. A first P-type body is formed in the N-type layer, and overlaps the left periphery of the first lengthwise-extending area of the gate layer. A second P-type body is formed in the N-type layer, and overlaps the right periphery of the second lengthwise-extending area of the gate layer.