发明名称 Super-PTAT current source
摘要 A super-PTAT current source receives a PTAT reference voltage as input. The PTAT reference voltage is combined with the gate-to-source voltage difference of two unequal-area input transistors and the combined voltage is imposed on a high negative temperature coefficient resistor to produce an output current that is super-PTAT. A current source supplies a bias current to the super-PTAT current source whereby excess current provided by the current source is consumed by closed loop adjustments. The super-PTAT current source generates a super-PTAT current having a constant slope, excellent stability and very good linearity. In one embodiment, the super-PTAT output current is mixed with a sub-PTAT current in a preselected ratio to generate output currents having exactly the desired temperature coefficient.
申请公布号 US7075360(B1) 申请公布日期 2006.07.11
申请号 US20040954698 申请日期 2004.09.29
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 HOLLOWAY PETER R.;WAN JUN
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
主权项
地址