发明名称 |
Method for producing hydrogen-doped silica powder, hydrogen-doped silica powder obtained from that method for use in a quartz glass crucible |
摘要 |
It is an object of the present invention to provide a hydrogen-doped silica powder that is useful in the formation of a quartz glass crucible that is capable of pulling a silicon single crystal without causing a state having dislocations in the silicon single crystal due to peeling of quartz glass segment. It is a further object of the invention to provide a quartz glass crucible for use in pulling a silicon single crystal whose inner surface is formed by use of the hydrogen-doped silica powder and a producing method of the silica powder. In order to achieve the objects above, the present invention provides a hydrogen-doped silica powder for use in producing a quartz glass crucible for use in pulling a silicon single crystal, wherein the silica powder is made of synthetic silica powder, natural silica powder or a mixture thereof, with a hydrogen concentration being in the range of 1x10<SUP>17 </SUP>to 5x10<SUP>19 </SUP>molecules/cm<SUP>3</SUP>, and a producing method thereof, and a quartz glass crucible for pulling a silicon single crystal whose inner surface is made of the silica powders.
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申请公布号 |
US7074731(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20030440429 |
申请日期 |
2003.05.16 |
申请人 |
SHIN-ETSU QUARTZ PRODUCTS CO., LTD. |
发明人 |
OHAMA YASUO;TOGAWA TAKAYUKI |
分类号 |
C03B20/00;C03C3/06;C01B33/12;C03B19/09;C03B19/10;C03C1/02;C30B15/10;C30B29/06 |
主分类号 |
C03B20/00 |
代理机构 |
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主权项 |
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