| 摘要 |
A nonvolatile ferroelectric memory device features a data bus pull-down sensing function. The nonvolatile ferroelectric memory device having a data bus pull-down sensing function comprises a plurality of cell array blocks, a common data bus unit and a sense amplifier array unit. The sense amplifier array unit pulls down a voltage of the common data bus unit before read data are sensed to a predetermined level to improve transmission characteristics of cell data to a data bus. As a result, the data sensing speed is improved.
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