| 摘要 |
A power semiconductor device includes a first semiconductor layer of non-doped Al<SUB>X</SUB>Ga<SUB>1-X</SUB>N (0<=X<=1), and a second semiconductor layer of non-doped or n-type Al<SUB>Y</SUB>Ga<SUB>1-Y</SUB>N (0<=Y<=1, X<Y) disposed on the first semiconductor layer. Source and drain electrodes are disposed separately from each other, and electrically connected to the second semiconductor layer. A gate electrode is disposed on the second semiconductor layer between the source and drain electrodes. An insulating film covers the second semiconductor layer between the gate and drain electrodes. A first field plate electrode is disposed on the insulating film and electrically connected to the gate electrode. A second field plate electrode is disposed on the insulating film and electrically connected to the source electrode.
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