| 摘要 |
Disclosed is a NAND flash memory device which includes butting taps that are formed in such a manner that a poly layer and a silicide layer are connected to given points at the ends of a DSL and the SSL of a NAND flash memory device through a metal contact. The butting taps reduces the resistance of the DSL and the SSL and, consequently, reduce the loading time of the DSL and the SSL.
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