发明名称 Nonvolatile ferroelectric memory device
摘要 A nonvolatile ferroelectric memory device transmits/receives data of a cell by using a main bitline of a cell array block as a data bus in a system on chip (SOC) having a hierarchical bitline structure, thereby reducing the chip size. In the nonvolatile ferroelectric memory device, when an interface is performed between a logic processor and a cell array block, cell data and amplification data of a sense amplifier are transmitted into an I/O port interface unit by using a main bitline of the cell array block as a data bus, thereby improving the data access speed and reducing the whole chip size.
申请公布号 US7075810(B2) 申请公布日期 2006.07.11
申请号 US20030740590 申请日期 2003.12.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK
分类号 G11C11/22 主分类号 G11C11/22
代理机构 代理人
主权项
地址