发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 An adhesion layer made from Al film or Ti film is formed on Cu electrode pad portions as external connection terminals of a Cu interconnection layer of an LSI formed on the surface layer of a semiconductor substrate. A BLM film having a stacked structure of Cr/Cu/Au or Ti/Cu/Au is formed on the adhesion layer. Solder ball bumps made from Pb and Sn are formed on the BLM film. The adhesion layer ensures a high adhesion strength and a high electric contact characteristic between the Cu electrode pad portions and the BLM film, that is, between the Cu electrode pads and the solder ball bumps.
申请公布号 KR100598757(B1) 申请公布日期 2006.07.11
申请号 KR19990018376 申请日期 1999.05.21
申请人 发明人
分类号 H01L21/60;H01L23/485 主分类号 H01L21/60
代理机构 代理人
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