发明名称 |
Method of fabrication of an infrared radiation detector and infrared detector device |
摘要 |
A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater than 700° C. The deposition pressure and the deposition temperature are selected so as to achieve an internal stress in the silicon-germanium layer that is within a predetermined range.
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申请公布号 |
US7075081(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040921012 |
申请日期 |
2004.08.17 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC VZW) |
发明人 |
FIORINI PAOLO;SEDKY SHERIF;CAYMAX MATTY;BAERT CHRISTIAAN |
分类号 |
C23C16/00;G01J1/02;B81B3/00;B81C1/00;G01J5/20;H01L31/0248;H01L31/09;H01L31/18 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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