发明名称 |
Method for making a semiconductor device having a high-k gate dielectric |
摘要 |
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
|
申请公布号 |
US7074680(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040935784 |
申请日期 |
2004.09.07 |
申请人 |
INTEL CORPORATION |
发明人 |
DOCZY MARK L.;DEWEY GILBERT;DATTA SUMAN;PAE SANGWOO;BRASK JUSTIN K.;KAVALIEROS JACK;METZ MATTHEW V.;SHERRILL ADRIAN B.;KUHN MARKUS;CHAU ROBERT S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|