Method for fabricating trench capacitors for large scale integrated semiconductor memories

摘要

An electrochemical method is provided for producing trenches for trench capacitors in p-doped silicon with a very high diameter/depth aspect ratio for large scale integrated semiconductor memories. Trenches (macropores) having a diameter of less than about 100 nm and a depth of more than 10 mum can be produced on p-doped silicon having a very low resistivity at a high etching rate.