Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment

摘要

A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film ( 112 ) on a semiconductor substrate ( 111 ) forming a first electrode, forming a first conductor film ( 113 ) on the first insulation film ( 112 ), forming a second insulation film ( 112 B) on the surface of the first conductor film ( 113 ), forming a third insulation film containing conductor particulates ( 114, 115 ) on the second insulation film ( 112 B), and forming a second conductor film forming a second electrode on the third insulation film.