发明名称 |
Method of making semiconductor device including a first set of windows in a mask with larger ratio of surface area than a second set of windows |
摘要 |
A method of creating two or more semiconductor elements of different characteristics in one and the same semiconductor substrate. Two antimony-diffused regions are formed in a p-type semiconductor region (of a semiconductor substrate for providing embedded layers for two field-effect transistors of unlike characteristics. Then the substrate is overlaid with a mask bearing two different patterns of windows. Then phosphor is introduced into the substrate through the mask windows to create phosphor-diffused regions in overlying relationship to the antimony-diffused regions. The two window patterns of the mask are such that the two phosphor-diffused regions differ in mean phosphor concentration. The embedded layers for the two FETs are obtained as an n-type epitaxial layer is subsequently formed on the p-type semiconductor region in which have been created the antimony-diffused regions and phosphor-diffused regions.
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申请公布号 |
US7074663(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040890688 |
申请日期 |
2004.07.14 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
IWABUCHI AKIO |
分类号 |
H01L21/8238;H01L21/266;H01L21/74;H01L21/8234 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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地址 |
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