发明名称 Method for fabricating a photomask for an integrated circuit and corresponding photomask
摘要 A method for fabricating a photomask for an integrated circuit. The method includes, for example, providing a substrate with at least one trench, providing a prepatterned surface at the bottom of the trench, and providing a multilayer coating over the substrate. As a result, the multilayer coating forms a reflection region on the surface of the substrate outside the trench and a non-reflection region in the trench. The invention additionally provides a corresponding photomask.
申请公布号 US7073969(B2) 申请公布日期 2006.07.11
申请号 US20030736775 申请日期 2003.12.17
申请人 INFINEON TECHNOLOGIES, AG 发明人 KAMM FRANK-MICHAEL
分类号 G01F9/00;G03F1/14;G03F1/24 主分类号 G01F9/00
代理机构 代理人
主权项
地址