发明名称 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME
摘要 <p>There is disclosed a resist composition which comprises, at least, a polymer in which a sulfonium salt having a polymerizable unsaturated bond, a (meth)acrylate having a lactone or a hydroxyl group as an adhesion group, and a (meth)acrylate having an ester substituted with an acid labile group are copolymerized. There can be provided a resist composition with high resolution which has high sensitivity and high resolution to high energy beam, especially to ArF excimer laser, F2 excimer laser, EUV, X-ray, EB, etc., has reduced line edge roughness, and comprises a polymeric acid generator which has insolubility in water, and sufficient thermal stability and preservation stability.</p>
申请公布号 KR20060080881(A) 申请公布日期 2006.07.11
申请号 KR20060001203 申请日期 2006.01.05
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;OHSAWA YOUICHI;TACHIBANA SEIICHIRO
分类号 G03F7/004;G03F7/027 主分类号 G03F7/004
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