| 发明名称 |
Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor |
| 摘要 |
A method of monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow.
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| 申请公布号 |
US7074659(B2) |
申请公布日期 |
2006.07.11 |
| 申请号 |
US20030713316 |
申请日期 |
2003.11.13 |
| 申请人 |
VOLTERRA SEMICONDUCTOR CORPORATION |
发明人 |
ZUNIGA MARCO A.;YOU BUDONG |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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