| 发明名称 |
Methods of forming strained-semiconductor-on-insulator finFET device structures |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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| 申请公布号 |
US7074623(B2) |
申请公布日期 |
2006.07.11 |
| 申请号 |
US20030456708 |
申请日期 |
2003.06.06 |
| 申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
LOCHTEFELD ANTHONY J.;LANGDO THOMAS A.;HAMMOND RICHARD;CURRIE MATTHEW T.;BRAITHWAITE GLYN;FITZGERALD EUGENE A. |
| 分类号 |
H01L21/335;H01L21/00;H01L21/336;H01L21/337;H01L21/762;H01L21/8234;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/335 |
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