发明名称 |
Poly-sealed silicide trench gate |
摘要 |
Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The gate bus trench and/or gate structures in the device trenches can contain a metal/silicide to reduce resistance, where polysilicon layers surround the metal/silicide to prevent metal atoms from penetrating the gate oxide in the device trenches. CMP process can remove excess polysilicon and metal and planarize the conductive gate structure and/or overlying insulating layers. The processes are compatible with processes forming self-aligned or conventional contacts in the active device region.
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申请公布号 |
US7075145(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040768243 |
申请日期 |
2004.01.29 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES (HONG KONG) LIMITED |
发明人 |
WILLIAMS RICHARD K.;CORNELL MICHAEL E.;CHAN WAI TIEN |
分类号 |
H01L29/76;H01L21/336;H01L29/423;H01L29/45;H01L29/49;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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