发明名称 Semiconductor memory device, write control circuit and write control method for the same
摘要 A semiconductor memory device and a write control circuit which may detect write failures and a write control method for the same are provided. The semiconductor memory device may include a memory cell array, a bit line amplifier, a switch unit, and a write driver. Exemplary embodiments of the semiconductor memory device, according to the present invention, may determine the activation timing of the column select line signal using a clock enable signal and a mode register set signal, without synchronizing with a master clock signal.
申请公布号 US7075854(B2) 申请公布日期 2006.07.11
申请号 US20040927142 申请日期 2004.08.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SEI-HUI;KANG SANG-SEOK
分类号 G11C8/00;G11C29/50;G11C7/10;G11C7/12;G11C11/40;G11C11/407;G11C29/12 主分类号 G11C8/00
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