发明名称 |
Semiconductor memory device, write control circuit and write control method for the same |
摘要 |
A semiconductor memory device and a write control circuit which may detect write failures and a write control method for the same are provided. The semiconductor memory device may include a memory cell array, a bit line amplifier, a switch unit, and a write driver. Exemplary embodiments of the semiconductor memory device, according to the present invention, may determine the activation timing of the column select line signal using a clock enable signal and a mode register set signal, without synchronizing with a master clock signal.
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申请公布号 |
US7075854(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040927142 |
申请日期 |
2004.08.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEI-HUI;KANG SANG-SEOK |
分类号 |
G11C8/00;G11C29/50;G11C7/10;G11C7/12;G11C11/40;G11C11/407;G11C29/12 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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