Method for forming the transistor with recess gate,申请号KR20040047584-传众专利搜索

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发明名称	Method for forming the transistor with recess gate
摘要
申请公布号	KR100598172(B1)	申请公布日期	2006.07.10
申请号	KR20040047584	申请日期	2004.06.24
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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