MEMORY WITH SELECTABLE SINGLE CELL OR TWIN CELL CONFIGURATION AND METHOD OF OPERATING A MEMORY

摘要

A memory circuit (10) comprises a memory including a memory array (32), a twin cell mode predecoder (100), and a row address predecoder (207). The memory array comprises word lines (34). The twin cell mode predecoder is configured for selecting one of four word line (118, 124, 130, 136) activation configurations for the memory array. The four word line activation configurations include three twin cell word line activation configurations and a single cell word line activation configuration. The row address predecoder is configured for selecting one of four word lines (280, 282, 284, 286) if the single cell word line activation configuration is selected.