COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor for reducing a leaked current in a diode that is the basic structure of a device and reducing energy loss.

SOLUTION: A 3C-SiC single-crystal buffer layer 3 having a thickness of 0.1-100 nm, a carrier concentration of 1016-21/cm3, and the same conduction type as the Si single-crystal substrate, a 3C-SiC single-crystal layer 4 having a thickness of 0.1 nm-10 μm, a carrier concentration of 1016-21/cm3, and the same conduction type as the Si single-crystal substrate, and an n-type or p-type compound semiconductor single-crystal film 5 having a thickness of 0.01-100 μm, a carrier concentration of 1011-16/cm3(≈a resistivity of 1-100,000 Ωcm) are successively laminated on an n-type or p-type Si single-crystal substrate 2 having a crystal plane orientation ä111}, a surface having no atomic level differences or even number of atomic step differences, and a carrier concentration of 1016-21/cm3(≈a resistivity of 1-0.00001 Ωcm).

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