SEMICONDUCTOR ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device employing ELO (Epitaxial Lateral Over Growth) in which high breakdown voltage characteristics are realized by growing high purity GaN while suppressing diffusion of Si from a selective mask material. SOLUTION: In a structure where an SiO2mask 103 and GaN layers 104 and 106 are formed selectively on a single crystal substrate 101, dielectric constant of the SiO2mask 103 is lower than that of the GaN layer 104 and an AlGaN layer 105 is inserted between the GaN layers 104 and 106. COPYRIGHT: (C)2006,JPO&NCIPI