| 摘要 |
1,086,128. Semi-conductor devices. MOTOROLA Inc. Sept. 28, 1965 [Oct. 23, 1964], No. 41190/65. Heading H1K. [Also in Divisions G4 and H3] The breakover voltage of the middle junction of a four-layer switching device is substantially constant for a plurality of such devices formed simultaneously on a single wafer of semiconductor material and is determined by the impurity concentrations in two regions on either side of the middle junction, one of the regions (produced by diffusion and located near the surface of layer 138) having an impurity concentration at the limit of solid solubility and the other region 142 having a lower concentration (produced during epitaxial deposition of the layers). The wafer may constitute an integrated circuit, with resistors formed either as thin films or by diffusion.
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