发明名称 |
HIGH-SENSITIVITY IMAGE SENSOR AND FABRICATION METHOD THEREOF |
摘要 |
A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form a P-type region; forming crossed active silicon by patterning the rest of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; implanting P-type ions into first two predetermined regions facing each other of the crossed active silicon to form P-type regions; implanting N-type ions into second two predetermined regions facing each other except for the P-type regions of the crossed active silicon to form N-type regions; forming a gate oxide layer and a gate electrode on the crossed active silicon; and forming a connection part to connect the P-type region of the crossed active silicon to the P-type region of the silicon substrate.
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申请公布号 |
US2006145196(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20040024783 |
申请日期 |
2004.12.30 |
申请人 |
KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
KIM HOON |
分类号 |
H01L21/00;H01L21/425;H01L21/8228;H01L27/148;H01L29/768;H01L31/113 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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