| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method in which a growth substrate can be reused and manufacturing time and effort are relatively small. <P>SOLUTION: A growth substrate 1 is prepared, a functional semiconductor layer line 2 is epitaxially grown in the growth substrate 1, and an isolation region 4 in parallel to the main surface 8 of the growth substrate 1 is formed in the growth substrate 1 by ion implantation. In this case, after the epitaxial growth, the ion implantation to growth substrate 1 is performed to extend through the functional semiconductor layer line 2 and to deposit a support substrate in the functional semiconductor layer line 2, and a part of the growth substrate 1 opposite to the support substrate in the view of the isolation region 4 is isolated along the isolation region 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
