NITROGEN COMPOUND, RESIST COMPOSITION, AND PATTERN-FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist material that can enlarge depth of focus (DoF) that is the focus margin.

SOLUTION: The resist material includes a basic compound like ethylenediamine represented by general formula (1). In addition, the pattern forming method comprises the following steps: the step where the resist material is coated on the base plate; the step where the resultant coated film is treated with heat; the step where the heat-treated film is exposed via a photomask with high energy rays of less than 300 nm or electronic beams; the step where, if necessary, the exposed film is treated with heat; and the step where the developing solution is used to effect the developing process.

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