| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in a switching MMIC, it is sometimes the case that the control resistance is arranged close to a common input terminal pad and an output terminal pad to improve the breakdown voltage and protection elements are connected using a dopant region in the periphery of each pad, however, a high-frequency signal path occurs due to the parasitic capacitance of the control resistance having a low resistance value and the protection elements, which causes deterioration in isolation. SOLUTION: A high resistor is connected between a switching element and the protection element closest to the switching element and to the control resistance between adjacent protection elements. Due to this structure, the high-frequency signal path is cut off, and hence the leakage of high-frequency signals can be prevented even if the parasitic capacitance is generated by connecting the protection elements. Consequently, the breakdown voltage is improved and thereby the deterioration in isolation can be suppressed. COPYRIGHT: (C)2006,JPO&NCIPI
|
